«Problem and perspective of GaN use in defense systems »
Francis DOUKHAN & François REPTIN - DGA

«Disruptive technological routes to monitor temperature and improve thermal management in GaN HEMTs »
Marie LESECQ, Flavien COZETTE, Mahmoud ABOU DAHER, Mohamed-Reda IREKTI, Mohammed BOUCHERTA, Nicolas DEFRANCE, Yvon CORDIER & Jean-Claude DE JAEGER – IEMN, CNRS-Université de Lille, CRHEA, CNRS-Valbonne

«InAlGaN/GaN HEMT devices for Ka and Q bands applications»
Stéphane PIOTROWICZ, Olivier PATARD, Jean-Claude JACQUET, Piero GAMARRA, Christian DUA & Sylvain DELAGE - III-V lab

«Advanced characterization and modelling methods of GaN HEMT transistors»
Jean-Christophe NALLATAMBY & Raymond QUERE - XLIM, CNRS-Université de Limoges

«MMICs and Modules based on GaN HEMT technology for communication and sensor applications»
Michael SCHLECHTWEG – Fraunhofer Institute IAF (Germany)

«GaN at Thales DMS: from circuits to systems»
Yves MANCUSO - Thales Systèmes Aéroportés

«Recent development in GaN/SiC power technology for high frequencies applications»
Didier FLORIOT – UMS.

«High performance plastic packaged 60W S-band quasi-MMIC HPA»
Zineb OUARCH, Maxime OLIVIER & Philippe EUDELINE - UMS - Thales Air Systems